@inproceedings{Hezayyin:2024,
abstract = {Computation in memory ({CiM}) can potentially mitigate the high energy and latency associated with the back-and-forth data transfer between the processor core and memory sub-systems. This bottleneck is known as the memory wall problem and is further pressed by data-intensive applications. Measuring the similarity between two binary patterns is a data-intensive, highly frequent kernel in many modern applications that can be accelerated using the {CiM} concept. Content addressable memory ({CAM}) and its ternary version ({TCAM}) are the specific {CiM} blocks for the task of binary pattern similarity measurements. The performance and energy efficiency of the {TCAM} can be further improved by utilizing the emerging resistive non-volatile memory ({NVM}). Among different {NVM} technologies, redox-based {RAM} ({ReRAM}) is a promising candidate to be implemented within the {NVM}-based {TCAM}, mainly due to its highly distinct resistive levels. Besides the performance and energy benefits of the {ReRAM}-based {TCAM} ({ReTCAM}), its high functional quality is of utmost importance and needs to be carefully taken into account. More specifically, the co-integration of the {ReRAM} and transistor technologies results in new fault behaviors. To assure the high quality of the {ReTCAM}, in this paper, we aim to develop a March-like test algorithm tailored for {ReTCAM} array. The proposed March-like test algorithm is extendable and can achieve 100\% fault coverage.},
author = {Hezayyin, Haneen G. and Mayahinia, Mahta and Tahoori, Mehdi},
booktitle = {2024 {IEEE} International Conference on Design, Test and Technology of Integrated Systems ({DTTIS})},
date = {2024-12-13},
doi = {10.1109/DTTIS62212.2024.10780399},
eventdate = {2024-10-14},
eventtitle = {2024 {IEEE} International Conference on Design, Test and Technology of Integrated Systems ({DTTIS})},
isbn = {9798350363128},
issn = {2832-823X},
keywords = {Fabrication, Associative memory, Nonvolatile memory, Random access memory, Data transfer, Energy efficiency, Transistors, Kernel, Testing},
pages = {1–4},
title = {Testing {ReRAM}-based {TCAM} for Computation-in-Memory Applications},
url = {https://ieeexplore.ieee.org/abstract/document/10780399},
venue = {Aix-EN-PROVENCE, France},
}